Toshiba’s line-up adds four products, DF5G5M4N, DF5G6M4N, DF6D5M4N and DF6D6M4N. All of these can protect different high-speed interfaces including USB Type-C and HDMI. The TVS diodes offer improved protection with lower dynamic resistance and a lower clamp voltage. They are housed in small LGA packages (DFN5 [1.3 x 0.8 mm] for 4-bit, DFN6 [1.25 x 1.0 mm] for 2-bit) in a flow-through design. It enables easy board layout as the package can be placed directly on the high-speed bus lines. The flow-through design together with the typical diode capacitance of 0.2 pF also minimizes the signal distortion of high-speed interfaces.
The TVS diodes are fabricated with Toshiba’s ESD Array Process IV (EAP-IV process) that realizes 20% lower dynamic resistance than current 4-bit DF5G7M2N product while enhancing overall protection by increasing ESD immunity level and reducing surge voltage impact on latter stage devices. There are 4-bit (DF5G5M4N, DF5G6M4N) and 2-bit (DF6D5M4N, DF6D6M4N) products for both 3.3V and 5.0V signal lines.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com